Specifically designed for Automotive applications, ID = 75A this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

? Integrated Starter Alternator
? 42 Volts Automotive Electrical Systems

? Advanced Process Technology
? Ultra Low On-Resistance
? Dynamic dv/dt Rating
? 175°C Operating Temperature
? Fast Switching
? Repetitive Avalanche Allowed up to Tjmax