? Open NAND Flash Interface (ONFI) 1.0-compliant1
? Single-level cell (SLC) technology
? Organization
- Page size x8: 2112 bytes (2048 + 64 bytes)
- Page size x16: 1056 words (1024 + 32 words)
- Block size: 64 pages (128K + 4K bytes)
- Plane size: 2 planes x 512 blocks per plane
- Device size: 1Gb: 1024 blocks
? Asynchronous I/O performance
-tRC/tWC: 20ns (3.3V), 25ns (1.8V)
? Array performance
- Read page: 25μs
- Program page: 200μs (TYP, 3.3V and 1.8V)
- Erase block: 700μs (TYP)
? Command set: ONFI NAND Flash Protocol
? Advanced command set
- Program page cache mode
- Read page cache mode
- One-time programmable (OTP) mode
- Two-plane commands
- Read unique ID
- Internal data move
- Block lock (1.8V only)
? Operation status byte provides software method for detecting
- Operation completion
- Pass/fail condition
- Write-protect status
? Internal data move operations supported within the device from which data is read
? Ready/busy# (R/B#) signal provides a hardware method for detecting operation completion
? WP# signal: write protect entire device
? First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management.
? Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
? RESET (FFh) required as first command after power-on
? Alternate method of device initialization (Nand_Init) after power up3 (contact factory)
? Quality and reliability
- Data retention: JESD47 compliant; see qualification report
- Endurance: 100,000 PROGRAM/ERASE cycles
? Operating Voltage Range
- VCC: 2.7-3.6V
- VCC: 1.7-1.95V
? Operating temperature:
- Commercial (CT): -0oC to +70oC
- Industrial (IT): -40oC to +85oC
? Package
- 48-pin TSOP Type 1, CPL2
- CPL = Center parting line.