Schottky diodes are metal-semiconductor devices made of precious metals (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode. The barrier formed on the contact surface of the two has rectification characteristics. Because there are a large number of electrons in N-type semiconductors, and there are only a very small amount of free electrons in noble metals, electrons diffuse from the high concentration of B to the low concentration of A. Obviously, there are no holes in metal A, and there is no diffusion movement of holes from A to B. As electrons continue to diffuse from B to A, the electron concentration on the surface of B gradually decreases, and the electrical neutrality of the surface is destroyed, so a potential barrier is formed, and the direction of the electric field is B→A. But under the action of this electric field, the electrons in A will also produce a drifting movement from A→B, thereby weakening the electric field formed by the diffusion movement. When a space charge region with a certain width is established, the drifting movement of electrons caused by the electric field and the diffusion movement of electrons caused by different concentrations reach a relative balance, forming a Schottky barrier.

? Very small conduction losses
? Negligible switching losses
? Extremely fast switching
? Low forward voltage drop
? Low capacitance
? Avalanche specification
? ECOPACK?2 compliant component for DPAK on demand