Flash memory is a long-life non-volatile memory (the stored data information can still be maintained in the event of a power failure). Data deletion is not in a single byte unit but in a fixed area. Block as a unit (Note: NOR Flash is byte storage.) Flash memory (sometimes called flash RAM) is a non-volatile memory with constant power supply, which can be stored in a storage unit called a block. Delete and adapt. Flash memory is a variant of electrically erasable programmable read-only memory (EEPROM). The difference between EEPROM and flash memory is that it deletes and rewrites at the byte level, so that the update speed of EEPROM is slower than that of flash memory. Flash memory is usually used to store control codes, such as the basic input output system (BIOS) in a personal computer. When the input/output system needs to be changed (rewritten), the flash memory can be written in blocks (rather than bytes), so that the flash memory can be updated more easily.

Offered in 256Mx8bit, the K9F2G08U0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200μs on the
(2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0B′s extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

? Voltage Supply- 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V
? Organization- Memory Cell Array : (256M + 8M) x 8bit
? Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
? Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25μs(Max.)
- Serial Access : 25ns(Min.)
? Fast Write Cycle Time
- Page Program time : 200μs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
? Command/Address/Data Multiplexed I/O Port
? Hardware Data Protection
- Program/Erase Lockout During Power Transitions
? Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
? Command Driven Operation
? Unique ID for Copyright Protection
? Package :
- K9F2G08X0B-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)