These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

? 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V
? Low gate charge ( typical 35 nC)
? Low Crss ( typical 13 pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability