N-channel MOS transistors: Metal-Oxide-SemIConductor (Metal-Oxide-SemIConductor) transistors are referred to as MOS transistors, which are divided into P-type MOS tubes and N-type MOS tubes. The integrated circuit formed by the MOS tube is called the MOS integrated circuit, and the complementary MOS integrated circuit formed by the PMOS tube and the NMOS tube is the CMOS integrated circuit. The working principle of mosfet: To make the enhanced N-channel MOSFET work, a positive voltage VGS between G and S and a positive voltage VDS between D and S are added to generate a positive working current ID. Changing the voltage of VGS can control the working current ID.

? Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.)
? High forward transfer admittance: IYfs I= 7.0 S (typ.)
? Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
? Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)