The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8?lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.

? Input threshold current: IF=5mA(max.)
? Supply current (ICC): 11mA(max.)
? Supply voltage (VCC): 10?35V
?Output current (IO): ±1.5A (max.)
?Switching time (tpLH/tpHL): 0.5μs(max.)
?Isolation voltage: 2500Vrms(min.)
?UL recognized: UL1577, file No.E67349
?Option(D4) VDE Approved : DIN EN60747-5-2 Maximum Operating Insulation Voltage : 890VPK Highest Permissible Over Voltage: 4000VPK(Note):When a EN60747-5-2 approved type is needed, Please designate "Option(D4)"