The TLP350 consists of a GaA?As light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP350 is suitable for gate driving circuit of IGBT or power MOS FET..
? Peak output current: I O = ±2.0 A (max)
? Guaranteed performance over temperature: ?40 to 100°C
? Supply current:I CC = 2 mA (max)
? Power supply voltage: V CC = 15 to 30 V
? Threshold input current : I FLH = 5 mA (max)
? Switching time (t pLH /t pHL ) : 500 ns (max)
? Common mode transient immunity: 15 kV/μs
? Isolation voltage: 3750 Vrms