These N-Channel enhancement mode power field effecttransistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply

? 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V
? Low gate charge ( typical 15 nC)
? Low Crss ( typical 8.0 pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability