These N-Channel enhancement mode power field effecttransistors are produced using Fairchild's proprietary, planarstripe,DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology.

? 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
? Low gate charge ( typical 48 nC)
? Low Crss ( typical 21 pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability