The Schottky Diode SR3100 using the Schottky Barrier principle with a Molybdenum barrier metal.These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.Ideally suited for low voltage,high frequency rectification,or as free wheeling and polarity protection diodes.

? Metal-Semiconductor junction with guard ring
? Epitaxial construction
? Low forward voltage drop
? High current capability
? The plastic material carries UL recognition 94V-0
? For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications